Nature of Photoelectric Effect in a Ge-on-Si SPAD at Ultralow Energy in Incident Pulsed Laser Radiation

The photoelectric effect in a Ge-on-Si single-photon avalanche detector (SPAD) at an ultralow energy incident pulsed laser radiation is considered the frame of classical theory electrodynamics continuous media. It shown that which shared among huge number electrons Ge matrix can concentrate on only one these through constructive interference fields re-emitted by surrounding electrons. Conservation this case upheld because substantial narrowing effective bandgap heavily doped p-Ge, used design SPAD considered.